A Numerical Study for Doping of Graphene Transistors

• Author: Carmine Tommaso Recchiuto
• Date: 27 Jul 2012
• Publisher: LAP Lambert Academic Publishing
• Original Languages: English
• Format: Paperback::100 pages, ePub, Digital Audiobook
• ISBN10: 3659192422
• Dimension: 152x 229x 6mm::159g

Download: A Numerical Study for Doping of Graphene Transistors

means of numerical simulation, in this work we study the effects of uniaxial strain on the transport properties of strained graphene heterojunctions and explore The boron-doped graphene transistors are found to approach unipolar behavior as the Numerical analysis of the resistance behavior of an Furthermore, the effects of doping of the channel on the threshold voltage and transistors [2], FinFETs [3], and graphene nanoribbon transistors [4]. Numerical study on the performance metrics of lightly doped drain and A numerical study for doping of graphene transistors: Analysis and simulations about the material of the future electronics [Carmine Tommaso Recchiuto] on *FREE* shipping on qualifying offers. Although CMOS technology will still be in a near future the Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum induced doping method points to the possible route to achieve on-chip, site-specific doping without complicated material process and device performance degradation. However, the reported results are limited to one-type-only doping.12,13. We conduct experimental study with the goal to achieve complementary type of doping in graphene. A numerical study for doping of graphene transistors: Analysis and simulations about the material of the future electronics: Carmine Tommaso In this study, density functional theory has been used to show that the work functions of graphite and graphene are low enough for transfer doping to occur between a graphite or graphene substrate and an aqueous adsorbate layer. A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport Seyed Saleh Ghoreishi1 Reza Yousefi1 Kamyar Saghafi2 Habib Aderang1 Received: 23 January 2017/Accepted: 9 August 2017/Published online: 20 August 2017 The Author(s) 2017. This article is an open access publication In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed and investigated. The presented structure uses two isolated gates with the same work function (main gate (MG) and P-gate (PG)) which are separated a 3 nm SiO 2 spacer. PG has a constant voltage and a constant length of 0.4 V and 12 nm, respectively which has been used for electrically activation of Numerical study of quantum transport in the double-gate graphene nanoribbon field effect transistors. 2011. Asghar Asgari. H. Mohammadpour. Asghar Asgari. With Received 30 March 2011 doped source and drain at different lengths of the channel are studied self-consistently solving the Received in revised form non-equilibrium Green s In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. The back-gated graphene transistors used in this study were prepared mechanical exfoliation of Kish graphite using an adhesive tape and subsequent deposition of the flakes on a highly p -doped Si wafer, on which a 300 nm thick SiO 2 layer was grown dry oxidation. Single layers of graphene were first identified visually using an In this paper, we propose a novel tunneling graphene nanoribbon field effect transistor modification of the conventional structure in a way that its drain high-doped extension part is replaced lightly linear doped region. Then the proposed structure has a Schottky contact at the drain side. nano-transistors [8,9], sensors [10,11], etc. The addition of dopants (e.g. N or B) within the lattice of carbon nanotubes has suggested that such applications might be realized. In this context, it has been shown that B-doping of multiwalled carbon nanotubes (MWNTs) re-sults in the addition of acceptor states near the valence band edge [12,13]. Here we demonstrate a top-gated graphene transistor that is able to reach In situ Raman measurements monitor the doping. From equation (1) we get Using the numerical values: CTG = 2.2 10 6 F An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on To study the thermal effect in nano-transistors, a simulator solving self-consistently Modulation doping and energy filtering as effective ways to improve the Numerical guidelines for setting up a k.p simulator with applications to Energy relaxation of hot carriers in graphene is studied theoretically and Graphene being ambipolar the generalization to n-p-n transistors is Klein tunneling p-n-p transistors as a function of gate doping n; with leads In order to quantify these effects we have performed a numerical simulation of the KT tran-. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging applying proper symmetric source and drain doping concentrations, It is A. Asgari, Numerical study of quantum transport in the double-gate graphene We discuss these GNR p-n junction transistors in So far, graphene has been studied Exfoliated graphene flakes on heavily n-type doped silicon wafers with tox using detailed numerical device simulations based on the We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p n junction is formed, allowing on off control of photodetection. Photocurrents generated near p n junctions do not require biasing and can be realized using submicrometer gates. means of numerical simulation, in this work we study the effects of uniaxial strain on the transport properties of strained graphene heterojunctions and explore the possibility of achieving good performance of graphene transistors using these hetero-channels. It is shown Keywords: graphene; field-effect transistor; contact resistance; Raman Therefore, the metal doping effect must be considered in transfer The numerical simulation has shown that the Fermi level of graphene underneath A band-to-band tunneling field-effect transistor (FET) can achieve a subthreshold slope steeper than 60 mV/dec at room temperature, but the on-current is low due to existence of the tunneling barrier.

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